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ON Semiconductort
Silicon Tuning Diode
This device is designed for FM tuning, general frequency control and tuning, or any top-of-the-line application requiring back-to-back diode configurations for minimum signal distortion and detuning. * High Figure of Merit Q = 140 (Typ) @ VR = 3.0 Vdc, f = 100 MHz * Guaranteed Capacitance Range 37-42 pF @ VR = 3.0 Vdc (MV104) * Dual Diodes - Save Space and Reduce Cost * Monolithic Chip Provides Near Perfect Matching - Guaranteed 1.0% (Max) Over Specified Tuning Range
MV104
DUAL VOLTAGE VARIABLE CAPACITANCE DIODE
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This device is available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.
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CASE 29 -11, STYLE 15 TO-92 (TO -226AA)
MAXIMUM RATINGS (EACH DIODE)
Rating Reverse Voltage Forward Current Total Power Dissipation @ TA = 25C Derate above 25C Junction Temperature Storage Temperature Range Symbol VR IF PD TJ Tstg Value 32 200 280 2.8 +125 -55 to +150 Unit Vdc mAdc mW mW/C C C Pin 1 A1 Pin 2 C Pin 3 A2
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE)
Characteristic Reverse Breakdown Voltage (IR = 10 Adc) Reverse Voltage Leakage Current TA = 25C (VR = 30 Vdc) TA = 60C Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz) CT, Diode Capacitance VR = 3.0 Vdc, f = 1.0 MHz pF Device MV104 Min 37 Max 42 Symbol V(BR)R IR TCC Min 32 -- -- -- Typ -- -- -- 280 Max -- 50 500 -- Unit Vdc nAdc ppm/C
Q, Figure of Merit VR = 3.0 Vdc f = 100 MHz Min 100 Typ 140
CR, Capacitance Ratio C3/C30 f = 1.0 MHz Min 2.5 Max 2.8
(c) Semiconductor Components Industries, LLC, 2006
March, 2006 - Rev. 4
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Publication Order Number: MV104/D
MV104
TYPICAL CHARACTERISTICS (Each Diode)
100 CT , DIODE CAPACITANCE (pF) 70 Q, FIGURE OF MERIT 450 550
40
350
250 150
20
TA = 25C f = 100 MHz
10 0.3
0.5
1.0
2.0
3.0
5.0 7.0 10
20
30
50
0
3.0
6.0
9.0
12
15
18
21
24
27
30
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance (Each Diode)
2000 1000 Q, FIGURE OF MERIT 500 200 100 50 20 10 VR = 3.0 Vdc TA = 25C 1.04 1.03 1.02
Figure 2. Figure of Merit versus Voltage
CT , DIODE CAPACITANCE (NORMALIZED)
VR = 2.0 V 4.0 V
1.01 1.00 0.99 0.98 0.97 0.96 -75 -50 -25 0 +25 +50 +75 +100 +125 NORMALIZED to CT at TA = 25C 30 V
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30
50
70
100
200 300
f, FREQUENCY (MHz)
TJ, JUNCTION TEMPERATURE (C)
Figure 3. Figure of Merit versus Frequency
100 50 I R , REVERSE CURRENT (nA) 20 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01
Figure 4. Diode Capacitance versus Temperature
TA = 125C
TA = 75C
TA = 25C
0
5.0
10
15
20
25
30
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Reverse Current versus Reverse Voltage
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MV104
PACKAGE DIMENSIONS TO-92 (TO-226AA) CASE 29-11 ISSUE AL
A R P L
SEATING PLANE
B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 ---
K
XX H V
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D G J C N N SECTION X-X
YLE 15: PIN 1. ANODE 1 2. CATHODE 3. ANODE 2
DIM A B C D G H J K L N P R V
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
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MV104/D

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